Characterization in Silicon Processing by Yale Strausser

By Yale Strausser

This e-book stories strategies in which silicon processing engineers operating with semiconductors can meet the calls for for stronger fabric caliber and function made precious by way of more and more stringent specifications, equivalent to lowering barrier movie thicknesses. one of the recommendations defined are tracking the effectiveness of floor cleansing methods; choosing the volume of silicon intake in the course of barrier movie and silicide progress; and silicon selective epitaxial development.

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Greater than about 10 to 1017 cm 3, depending on dopant species and instrument type). Thickness is then determined from the measured sputter time and crater depth. 44 SIMS also provides a good calibration reference for FTIR measurements, especially for the measurement of submicron film thicknesses. A destructive technique, SIMS is comparatively time-consuming (particularly as film thicknesses exceed 1-2 |im) and is most appropriate in cases where the other methods fail. Dopant Concentration and Dopant Profiling Dopant concentration in epitaxial films is measured by a variety of techniques which give either the carrier concentration or resistivity (four-point probe, SRP, capacitance-voltage, Hall effect), or elemental concentration (SIMS).

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